LM74670-Q1: Verification of Parallel NFET Configuration, Reverse Current Protection, Spec(s) Affected by Temperature Variation, etc.

Part Number:LM74670-Q1

Hi Team,

I have a few questions in regards to the LM74670-Q1. Please see below:

1. Can the LM74670-Q1 device drive two parallel NFETs?
   1. My thoughts are that the LM74670-Q1 can drive two parallel FETs.
      
      

2. For reverse current protection, would you need two separate LM74670-Q1s and NFETs in a back to back configuration?
   1. My understanding is that the device can't drive two NFETs in series. 
      
      
3. What are the implications of choosing an NFET that has a gate-to-source voltage threshold (V_GS(TH)) greater than 3V? Is this related to the body diode conduction mode?
   
   
4. Would I be able to achieve the above applications with the LM74610-Q1? What is the differentiation between the two devices, higher gate drive?
   
   
5. Apart from forward diode voltage spec on the MOSFET, what other specs should be considered across temperature variation?

Regards,

Daniel Foncannon