Part Number: TDA4VMXEVM
We have prepared the TDA4 SOM for manufacturing using the TI recommended stackup, material and trace/space requirements, essentially reproducing exactly the physical nature of the design. We have engaged a fabrication partner and submitted a preliminary fabrication package for a DFM analysis of the design. The results of that DFM analysis indicate 2 major issues:
- Inability to achieve the minimum trace/space requirements of 3 mils when specifying 1oz. Cu. The fabrication partner is recommending 4 mil trace/space @ 1oz. Most of the spacing issues appear to be correctable, which we can take care of.
- Inability to achieve impedance requirements of 66 ohm single-ended and 132 ohm differential on L3. the fabrication partner is able to achieve ~56 ohm /111 ohm on L3.
Questions:
- Do you have a more detailed stackup (from fab house) we can reference to see how you were able to manufacture this design? This would be extremely helpful to us because we won’t have initiate major changes to routing, etc.
- Does TI recommend maintaining 1 oz. Cu. on all inner signal/power layers? If so, we will need to increase width on all 3 mil wide stripline routing, affecting various high-speed interfaces, including DDR CA/CLK. Furthermore, can DDR impedance be reduced from 66/132 if necessary? Are the exact impedance critical, or just the impedance relationships between the DDR branches (33/66/132 ohms)?
- Alternatively, would ½ oz Cu. be acceptable on inner signal layers (L3, L5, L7, L10, L12, L14), while maintaining 1 oz planes? We’re concerned this may affect power integrity as many power pours exist on these layers.
The fabrication partner reference stackup is attached.
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