Part Number:DRV411
Dear TI engineer,
In the datasheet, I saw that the output voltage of the H bridge can reach 5V which is the VDD of DRV411 when the compensation current is small (R_load is very high). I can't understand it because I think that the output voltage should be near 1 volt lower than VDD due to the influence of the Vgs of up & low MOSFET in H bridge.
Could you help to explain how it realized or the datasheet is wrong?